2SK3402 PDF Datasheet – SWITCHING N-CHANNEL POWER MOSFET

2SK3402 NEC

Part Number : 2SK3402

Function : SWITCHING N-CHANNEL POWER MOSFET

Package :

Manufacturers : NEC

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2SK3402 pdf

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2SK3402 data sheet

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3402 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3402 is N-Channel MOS Field Effect Transistor designed for high current switching applications. ★ ORDERING INFORMATION PART NUMBER 2SK3402 2SK3402-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES • Low On-State Resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 18 A) • Low Ciss : Ciss = 3200 pF TYP. • Built-in Gate Protection Diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±36 ±144 40 1.0 150 –55 to +150 35 123 V V A A W W °C °C A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Note2 Note2 Storage Temperature Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14473EJ3V1DS00 (3rd edition) Date Published October 2004 NS CP(K) Printed in Japan The mark ★ shows major revised points. 1999, 2000 2SK3402 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 18 A VGS = 10 V, ID = 18 A VGS = 4.0 V, ID = 18 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 30 V, ID = 18 A VGS = 10 V RG = 10 Ω MIN. TYP. MAX. 10 ±10 UNIT µA µA V S 1.5 13 2.0 27 12 15 3200 520 270 36 310 170 180 2.5 Drain to Source On-state Resistance 15 22 mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Ti […]

2SK3402 Datasheet PDF