K16A60W PDF Datasheet – 600V, N-Ch MOSFET – Toshiba

K16A60W Toshiba Semiconductor

Part Number : K16A60W

Function : TK16A60W

Package :

Manufacturers : Toshiba Semiconductor

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K16A60W pdf

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MOSFETs Silicon N-Channel MOS (DTMOS) TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16A60W TO-220SIS 1: Gate 2: Drain 3: Source 1 2012-08-27 Rev.2.0 TK16A60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25) (t = 1.0 s) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR 600 ±30 15.8 63.2 40 231 4.0 15.8 63.2 150 -55 to 150 2000 0.6 V A W mJ A  V Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 25.3 mH, RG = 25 Ω, IAR = 4.0 A Symbol Rth(ch-c) Rth(ch-a) Max Unit 3.13 /W 62.5 Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2012-08-27 Rev.2.0 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol Test Condition IGSS IDSS V(BR)DSS Vth RDS(ON) VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 0.79 mA VGS = 10 […]

K16A60W Datasheet PDF