ULN2003A PDF Datasheet – Darlington Transistor Arrays

ULN2003A ON Semiconductor

Part Number : ULN2003A

Function : Darlington Transistor Arrays

Package :

Manufacturers : ON Semiconductor

Pinout :

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ULN2003A pdf

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ULN2003A data sheet

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ULN2003A, ULQ2003A High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The ULx2003A with a 2.7 kW series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic. Features http://onsemi.com MARKING DIAGRAMS 16 1 SOIC-16 D SUFFIX CASE 751B 1 Pin 9 A WL Y WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package 16 ULQ2003AG AWLYWW 1 16 ULN2003AG AWLYWW •ăThese are Pb-Free Devices 1/7 ULx2003A 2.7 k 5.0 k 3.0 k Figure 1. Representative Schematic Diagram ORDERING INFORMATION Device ULN2003ADR2G Package SOIC-16 (Pb-Free) SOIC-16 (Pb-Free) Shipping† 2500 Tape & Reel 2500 Tape & Reel 1 2 3 4 5 6 7 8 16 ULQ2003ADR2G 15 14 13 12 11 10 9 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (Top View) Figure 2. Pin Connections ©Ă Semiconductor Components Industries, LLC, 2007 1 November, 2007 – Rev. 0 Publication Order Number: ULN2003A/D ULN2003A, ULQ2003A MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.) Rating Output Voltage Input Voltage Collector Current – Continuous Base Current – Continuous Operating Ambient Temperature Range ULN2003A ULQ2003A Storage Temperature Range Junction Temperature Thermal Resistance, Junction-to-Ambient Case 751B, D Suffix Thermal Resistance, Junction-to-Case Case 751B, D Suffix Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) Symbol VO VI IC IB TA -20 to +85 -40 to +85 Tstg TJ RqJA 100 RqJC 20 ESD 2000 400 1500 V °C/W -55 to +150 150 °C °C °C/W Value 50 30 500 25 Unit V V mA mA °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 2 ULN2003A, ULQ2003A ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Chara […]

ULN2003A Datasheet PDF