2SK2903-01MR PDF Datasheet – N-CHANNEL SILICON POWER MOS-FET

2SK2903-01MR Fuji Electric

Part Number : 2SK2903-01MR

Function : N-CHANNEL SILICON POWER MOS-FET

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Manufacturers : Fuji Electric

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2SK2903-01MR pdf

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2SK2903-01MR data sheet

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2SK2903-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 60 ±50 ±200 ±30 720.8 50 +150 -55 to +150 Unit Equivalent circuit schematic Drain(D) V A A V mJ W °C °C *1 L=0.384mH, Vcc=24V Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS =60V VGS=0V VGS=±30V VDS=0V ID=40A VGS=10V ID=40A VDS=25V VDS=25V VGS =0V f=1MHz VCC=30V ID=80A VGS=10V RGS=10 Ω L=100 µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs Tch=25°C 50 1.0 70 0.13 1.5 Min. 60 2.5 Tch=25°C Tch=125°C Typ. 3.0 10 0.2 10 9.5 40 3100 1300 350 20 85 88 65 Max. 3.5 500 1.0 100 12 4650 1950 530 30 120 130 120 Units V V µA mA nA mΩ S pF 20 ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.5 62.5 Units °C/W °C/W 1 2SK2903-01MR Characteristics Power Dissipation PD=f(Tc) 60 10 3 FUJI POWER MOSFET Safe operating area ID=f(VDS):D=0.01,Tc=25°C 50 10 40 D.C. 2 t= 1µs 10µs PD [W] 100µs ID [A] 30 10 1 1ms 10ms 20 10 10 T 0 100ms t D= t T 0 0 50 100 150 10 -1 10 -1 10 0 10 1 10 2 10 3 Tc [°C] VDS [V] Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C 200 Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C VGS=20V 150 10V 8V 6.0V 100 ID [A] ID [A] 5 100 5.5V 10 5.0V 1 4.5V 4.0V 3.5V 0 0 1 2 3 […]

2SK2903-01MR Datasheet PDF