45N03LT PDF Datasheet – PHP45N03LT

45N03LT Philips Semiconductors

Part Number : 45N03LT

Function : PHP45N03LT

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Manufactures : Philips Semiconductors

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Philips Semiconductors TrenchMOS™ transistor Logic level FET Product specification PHP45N03LT FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance SYMBOL g d s QUICK REFERENCE DATA VDSS = 30 V ID = 45 A RDS(ON) ≤ 24 mΩ (VGS = 5 V) RDS(ON) ≤ 21 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP45N03LT is supplied in the SOT78 (TO220AB) conventional leaded package. PINNING PIN DESCRIPTION 1 gate 2 drain 3 source tab drain SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature – RGS = 20 kΩ – Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C – THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS – in free air MIN. – 55 MAX. 30 30 15 45 36 180 86 175 UNIT V V V A A A W ˚C TYP. – 60 MAX. 1.75 – UNIT K/W K/W November 1997 1 Rev 1.200 Philips Semiconductors TrenchMOS™ transistor Logic level FET Product specification PHP45N03LT STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance VGS = 0 V; ID = 0.25 mA; Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C VDS = 30 V; VGS = 0 V; Tj = 175˚C VGS = ±5 V; VDS = 0 V VGS = 5 V; ID = 25 A VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A; Tj = 175˚C MIN. 30 27 1 0.5 – TYP. 1.5 0.05 10 20 16 – MAX. 2 2.3 10 500 100 24 21 45 UNIT V V V V µA µA nA mΩ mΩ mΩ DYNAMIC CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER gfs Qg(tot) Qgs Qgd Ciss Coss Crss td on tr td off tf Ld Forward transconductance Total gate charge Gate-source charge Gate-drain ( […]

45N03LT Datasheet PDF

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