K2372 PDF Datasheet – 2SK2372

K2372 NEC

Part Number : K2372

Function : 2SK2372

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Manufacturers : NEC

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K2372 pdf

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K2372 data sheet

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor PACKAGE DIMENSIONS (in millimeters) designed for high voltage switching applications. FEATURES • Low On-Resistance 20.0 ± 0.2 1.0 15.7 MAX. 4 3.2 ± 0.2 4.7 MAX. 1.5 7.0 2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A) • Low Ciss Ciss = 3600 pF TYP. • High Avalanche Capability Ratings 1 3.0 ± 0.2 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (2SK2371/2SK2372) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (TC = 25 °C) Total Power Dissipation (Ta = 25 °C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 19 MIN. 450/500 ± 30 ± 25 ± 100 160 3.0 150 –55 ~ +150 25 446 V V A A W W °C °C A mJ 2.2 ± 0.2 5.45 1.0 ± 0.2 5.45 4.5 ± 0.2 2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A) 6.0 0.6 ± 0.1 2.8 ± 0.1 VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS MP-88 1. Gate 2. Drain 3. Source 4. Fin (Drain) Drain Gate Body Diode The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Source Document No. TC-2505 (O.D. No. TC-8064 Date Published January 1995 P Printed in Japan © 1995 2SK2371/2SK2372 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS(on) MIN. TYP. 0.2 0.22 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) yfs  IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 3600 700 50 40 70 160 60 95 20 40 1.0 500 4.5 2.5 8.0 100 ± 100 MAX. 0.25 0.27 3.5 V S UNIT Ω TEST CONDITION VGS = 10 V ID = 13 A 2SK2371 2SK2372 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 13 A VDS = VDSS, VGS = 0 VGS = ± 30 V, […]

K2372 Datasheet PDF