K2885 PDF Datasheet – N-Channel MOSFET – 2SK2885

K2885 Hitachi Semiconductor

Part Number : K2885, 2SK2885

Function : Silicon N Channel MOSFET High Speed Power Switching

Package : LDPAK Type

Manufacturers : Hitachi Semiconductor

Pinout : 1. Gate  2. Drain  3. Source  4. Drain

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K2885 pdf

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K2885 data sheet

Detail description :

2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK D G S ADE-208-545 A 2nd. Edition 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 30 ±20 45 180 45 75 150 –55 to +150 Unit V V A A A W °C °C 2 Electrical Characteristics (Ta = 25°C) Item Symbol Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current I DSS Gate to source leak current IGSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance RDS(on) Forward transfer admittance |yfs| Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage t d(on) tr t d(off) tf VDF Body to drain diode reverse trr recovery time  75 — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns Test Conditions ID = 10mA, VGS = 0 IG = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 ID = 1mA, VDS = 10V ID = 20A, VGS = 10V*1 ID = 20A, VGS = 4V*1 ID = 20A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 20A RL = 0.5Ω IF = 45A, VGS = 0 IF = 45A, VGS = 0 diF/ dt = 50A/µs See characteristics curves of 2SK2737 3 Channel Dissipation Pch (W) 2SK2885(L), 2SK2885(S) Main Characteristics Power vs. Temperature Derating 100 75 50 25 0 50 100 150 200 Case Temperature Tc (°C) Drain Current I D (A) 1000 Maximum Safe Operation Area 300 10 µs 100 30 10 3 1 OtlihmpisietearadretiboaynisRinDSD(Co(PnOT)Wcpe==ra211t5i10mo°0Cnms0)sµs 0.3 Ta = 25°C 0.1 1 shot pulse 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedanc […]

K2885 Datasheet PDF